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ID 45513
タイトルヨミ
ダイ3セダイ トウメイ ドウデンセイ アモルファス ハクマク ノ ソウセイ
タイトル別表記
Fabrication of Third-Generation Transparent Conducting Amorphous Oxide Thin Films
著者
林, 由佳子 徳島大学工学部化学応用工学科
三河, 通男 詫間電波高等専門学校通信情報工学科
富永, 喜久雄 徳島大学工学部電気電子工学科
キーワード
transparent conducting oxides
thin film
amorphous
zinc oxide
indium oxide
tin oxide
sputtering
pulsed laser deposition
資料タイプ
紀要論文
抄録
Transparent conducting amorphous thin films in the systems of ZnO-In2O3 and ZnO-SnO2 could
be deposited on glass substrates by simultaneous DC magnetron sputtering and/or pulsed laser
deposition techniques. Post-annealing under the reductive gas flow was effective on improving
surface roughness of the amorphous ZnO-In2O3 films deposited by the sputtering method.
Introduction of Ar gas as a background gas into a chamber enabled to deposit flat transparent
conducting amorphous films directly on the substrates by means of the pulsed laser deposition.
Resistivity of amorphous ZnO-SnO2 thin films deposited by the sputtering increased linearly with
an increase of zinc content, until the composition reached Zn2SnO4. The linear decrease in
resistivity was attributable to a linear carrier concentration probably due to that the increased
number of zinc cations occupying the tetrahedral sites in the amorphous structure.
掲載誌名
徳島大学工学部研究報告
ISSN
03715949
cat書誌ID
AA1221470X
50
発行日
2005-03-25
EDB ID
フルテキストファイル
言語
jpn
部局
理工学系