第3世代透明導電性アモルファス薄膜の創製

Transparent conducting amorphous thin films in the systems of ZnO－In2O3 and ZnO－SnO2 could
be deposited on glass substrates by simultaneous DC magnetron sputtering and/or pulsed laser
deposition techniques. Post-annealing under the reductive gas flow was effective on improving
surface roughness of the amorphous ZnO－In2O3 films deposited by the sputtering method.
Introduction of Ar gas as a background gas into a chamber enabled to deposit flat transparent
conducting amorphous films directly on the substrates by means of the pulsed laser deposition.
Resistivity of amorphous ZnO－SnO2 thin films deposited by the sputtering increased linearly with
an increase of zinc content, until the composition reached Zn2SnO4. The linear decrease in
resistivity was attributable to a linear carrier concentration probably due to that the increased
number of zinc cations occupying the tetrahedral sites in the amorphous structure.