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ID 116674
著者
Sasada, Atsuki Tokushima University
キーワード
subwavelength grating
high refractive index
deep ultraviolet
highly reflective mirror
AlN
資料タイプ
学術雑誌論文
抄録
Highly reflective reflector (> 99.9%) operating at deep ultraviolet (DUV) wavelength region around 244 nm was proposed by using subwavelength grating (SWG) patterned AlN substrate. Structural parameters of AlN-SWG were desgined for DUV reflector using the wavenumber dispersion relation of the eiegenmdoes resulting from its periodic refractive index distribution. The electromagnetic field calculated by finite-difference time-domain (FDTD) method revealed the polarization selective reflection characteristics of the designed AlN-SWG, and the SWG can achieve more than 99% reflectivity of p-polarization (the electric field is perpendicular to the grating fingers) at the DUV wavelength of 244 nm. This extremely high reflectivity, polarization selectivity and compactness of our AlN-SWG are very useful for various DUV applications, such as cavity of DUV laser diodes.
掲載誌名
Proceedings of SPIE
ISSN
0277786X
cat書誌ID
AA10619755
出版者
SPIE
11926
開始ページ
1192618
発行日
2021-10-27
備考
Yuusuke Takashima, Atsuki Sasada, Kentaro Nagamatsu, Masanobu Haraguchi, and Yoshiki Naoi "Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength ", Proc. SPIE 11926, Optical Manipulation and Structured Materials Conference 2021, 1192618 (27 October 2021); https://doi.org/10.1117/12.2616175
権利情報
Copyright 2021 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
出版社版
部局
理工学系
ポストLEDフォトニクス研究所