Twist angle dependence of graphene-stacked junction characteristics

Vertically stacked graphene diodes are fabricated using epitaxially grown graphene with twist angles ranging from 0° to 30°. Their switching behavior and negative differential conductance are observed at all the measured angles. The junction conductance in the initial state does not indicate clear angle dependence and is almost constant, i.e., 231 μS for all devices. The junction conductance in the high-bias region exhibits a steep peak at 12°. The on/off ratio of the stacked junction diode indicates a maximum value of 142 at 12°. Therefore, the fabricated stacked graphene device with a simple structure exhibits strong nonlinear electrical properties and negative differential conductance at all twist angles. The on/off ratio of the stacked junction diodes is controlled by the twist angle between two single-crystal graphene layers.

論文本文は2025-04-15以降公開予定

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.35848/1347-4065/ad364f.