ID | 111013 |
著者 |
Matsumura, Hisatomo
Tokushima University
|
資料タイプ |
学術雑誌論文
|
抄録 | We present microscopic Raman spectroscopy measurements on single-layer graphene epitaxially grown on 4H-SiC by a thermal decomposition method. We collected spectral data with spatial resolution, which allowed us to obtain two-dimensionally enhanced Raman mapping images. Shallow holes in SiC, which had areas of 5 to 20 µm and depths of 100 nm, enhanced the Raman intensity of the 2D band of graphene. A monolayer of gold nanoparticle (AuNP) aggregates was successfully prepared by dropping and drying a colloidal suspension of AuNPs. The AuNP exhibited 30-fold enhanced the Raman spectra in the wavenumber range of 1550–1700 cm−1. Locally enhanced Raman intensity was also demonstrated using a glass microbead.
|
掲載誌名 |
Japanese Journal of Applied Physics
|
ISSN | 13474065
00214922
|
cat書誌ID | AA12295836
AA11509854
|
出版者 | The Japan Society of Applied Physics
|
巻 | 55
|
号 | 6S1
|
開始ページ | 06GL05
|
発行日 | 2016-05-26
|
権利情報 | © 2016 The Japan Society of Applied Physics
|
EDB ID | |
出版社版DOI | |
出版社版URL | |
フルテキストファイル | |
言語 |
eng
|
著者版フラグ |
著者版
|
部局 |
理工学系
|