ID 111814
著者
Kawakami, Hiroki Tokushima University
資料タイプ
学術雑誌論文
抄録
Alloying at the metal–semiconductor interface induced by femtosecond laser irradiation associated with thermal annealing was examined to ascertain whether an ohmic contact was formed on silicon carbide (SiC). In general, the electric field of the femtosecond laser beam destroys the crystal structure, but with lower thermal damage around the irradiated areas. In addition to the laser irradiation, we employed thermal annealing to enhance the diffusion of the metal atoms inside the SiC. After these processes, an ohmic contact was successfully formed on the SiC with thermal annealing at a temperature of 900 °C, which is 100 °C lower than with the conventional thermal annealing method.
掲載誌名
AIP Advances
ISSN
21583226
出版者
AIP Publishing
8
6
開始ページ
065204
発行日
2018-06-04
権利情報
© 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
出版社版
部局
理工学系