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ID 113921
著者
Murakumo, Keisuke Tokushima University
Yamaoka, Yuya Tokushima University
資料タイプ
学術雑誌論文
抄録
We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ~1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.
掲載誌名
Japanese Journal of Applied Physics
ISSN
00214922
13474065
cat書誌ID
AA12295836
出版者
The Japan Society of Applied Physics
55
4S
開始ページ
04EH12
発行日
2016-03-23
権利情報
© 2016 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系