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ID 113925
著者
熊谷, 直人 National Institute of Advanced Industrial Science and Technology KAKEN研究者をさがす
資料タイプ
学術雑誌論文
抄録
GaAs/Ge/GaAs heterostructures were grown on high-index (113)B GaAs substrates by molecular beam epitaxy. Sublattice reversal in GaAs/Ge/GaAs was identified by comparing the anisotropic etching profile of the epitaxial sample with that for reference (113)A and (113)B GaAs substrates. The shape of the resulting mesa for the lower GaAs layer was similar to that for the reference (113)B GaAs substrate, whereas that for the upper GaAs layer was similar to that for the reference (113)A GaAs substrate. An atomic-resolution analysis was also conducted by mapping using energy-dispersive X-ray spectroscopy, whereby the sublattice reversal was directly observed through the atomic arrangements.
掲載誌名
Applied Physics Express
ISSN
18820786
18820778
cat書誌ID
AA12295133
出版者
The Japan Society of Applied Physics
11
1
開始ページ
015501
発行日
2017-11-30
権利情報
© 2018 The Japan Society of Applied Physics
Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license(https://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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言語
eng
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出版社版
部局
理工学系