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ID 113926
著者
熊谷, 直人 National Institute of Advanced Industrial Science and Technology KAKEN研究者をさがす
資料タイプ
学術雑誌論文
抄録
Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial wafers with (001) and (113)B orientations and they were directly bonded to form the coupled multilayer cavity. The (001) side cavity contains two types of InGaAs multiple quantum wells to realize optical gain for two-color lasing while a single GaAs layer of the (113)B side cavity is a nonlinear medium for efficient DFG. Lasing behavior was clearly observed for two modes under pulsed current conditions at room temperature. We found that intensity relation between two-color lasing was dependent on the pulse duration due to the different temporal profiles of emission intensity. Simultaneous two-color lasing in the device was also confirmed by measuring the sum-frequency generation signal using a beta barium borate crystal.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA12295836
出版者
The Japan Society of Applied Physics
57
4S
開始ページ
04FH03
発行日
2018-03-01
権利情報
© 2018 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系