Murakumo, Keisuke Tokushima University
Yamaoka, Yuya Tokushima University
We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ~1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.
Japanese Journal of Applied Physics
The Japan Society of Applied Physics
© 2016 The Japan Society of Applied Physics
jjap_55_4S_04EH12.pdf 2.86 MB