直近一年間の累計
アクセス数 : ?
ダウンロード数 : ?
ID 115744
著者
Murakami, N. Tokushima University
Sugiyama, Y. Tokushima University
資料タイプ
学術雑誌論文
抄録
The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μm was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions.
掲載誌名
Japanese Journal of Applied Physics
ISSN
00214922
13474065
cat書誌ID
AA12295836
出版者
The Japan Society of Applied Physics|IOP Publishing
60
SC
開始ページ
SCCD01
発行日
2021-02-22
権利情報
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.35848/1347-4065/abe208.
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系