Fabrication of two - color surface emitting device of a coupled vertical cavity structure with InAs QDs formed by wafer - bonding
Ota, Hiroto Tokushima University
We fabricated the two color surface emitting device of a coupled cavity structure which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on a (001) and (113)B GaAs substrates and the coupled multilayer cavity structure was fabricated by wafer-bonding of them. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode lights. The bonding position was optimized for the equivalent intensity of two-color emission. We formed a current injection structure, and two-color emission was observed by current injection, although lasing was not observed.
Japanese Journal of Applied Physics
The Japan Society of Applied Physics
© 2016 The Japan Society of Applied Physics
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