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ID 113920
タイトル別表記
Fabrication of two - color surface emitting device of a coupled vertical cavity structure with InAs QDs formed by wafer - bonding
著者
Ota, Hiroto Tokushima University
資料タイプ
学術雑誌論文
抄録
We fabricated the two color surface emitting device of a coupled cavity structure which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on a (001) and (113)B GaAs substrates and the coupled multilayer cavity structure was fabricated by wafer-bonding of them. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode lights. The bonding position was optimized for the equivalent intensity of two-color emission. We formed a current injection structure, and two-color emission was observed by current injection, although lasing was not observed.
掲載誌名
Japanese Journal of Applied Physics
ISSN
00214922
13474065
cat書誌ID
AA12295836
出版者
The Japan Society of Applied Physics
55
4S
開始ページ
04EH09
発行日
2016-03-18
権利情報
© 2016 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系