直近一年間の累計
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ID 115587
著者
Yin, Yue Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Ren, Fang Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Wang, Yunyu Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Liu, Zhiqiang Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
敖, 金平 The University of Tokushima KAKEN研究者をさがす
Liang, Meng Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Wei, Tongbo Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Yuan, Guodong Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Ou, Haiyan Technical University of Denmark
Yan, Jianchang Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Yi, Xiaoyan Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Wang, Junxi Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Li, Jinmin Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
キーワード
AlN thin film
WS2
MOCVD
van der Waals epitaxy
資料タイプ
学術雑誌論文
抄録
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.
掲載誌名
Materials
ISSN
19961944
出版者
MDPI
11
12
開始ページ
2464
発行日
2018-12-04
権利情報
© 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
EDB ID
出版社版DOI
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言語
eng
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出版社版
部局
理工学系