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ID 111013
著者
Matsumura, Hisatomo Tokushima University
資料タイプ
学術雑誌論文
抄録
We present microscopic Raman spectroscopy measurements on single-layer graphene epitaxially grown on 4H-SiC by a thermal decomposition method. We collected spectral data with spatial resolution, which allowed us to obtain two-dimensionally enhanced Raman mapping images. Shallow holes in SiC, which had areas of 5 to 20 µm and depths of 100 nm, enhanced the Raman intensity of the 2D band of graphene. A monolayer of gold nanoparticle (AuNP) aggregates was successfully prepared by dropping and drying a colloidal suspension of AuNPs. The AuNP exhibited 30-fold enhanced the Raman spectra in the wavenumber range of 1550–1700 cm−1. Locally enhanced Raman intensity was also demonstrated using a glass microbead.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA12295836
AA11509854
出版者
The Japan Society of Applied Physics
55
6S1
開始ページ
06GL05
発行日
2016-05-26
権利情報
© 2016 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系