Far-infrared emission from graphene on SiC by current injection

The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform infrared spectroscopy. The radiation directivity from the graphene emitter was observed in the directions perpendicular to the surface and edge of the sample. The emission energy density from the graphene edge was larger than that from the graphene surface in all directions. The maximum measured temperature change at 0.4 W for the edge emission was 76.1 K for a tilt angle of 50° and that for the surface emission was 54.1 K for 0°. A blackbody-like emission spectrum with a constant peak wavelength of 10.0 µm, regardless of the applied electrical power, was observed for both the surface and edge. A far-infrared light emitter was successfully realized using single-crystal graphene on SiC.

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.35848/1347-4065/ac5423.