| ID | 110895 |
| Author |
Aritsuki, Takuya
Tokushima University
Nakashima, Takeshi
Tokushima University
Kobayashi, Keisuke
Tokushima University
Ohno, Yasuhide
Tokushima University
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Nagase, Masao
Tokushima University
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|
| Content Type |
Journal Article
|
| Description | The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step-terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 ºC for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2V-1s-1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure.
|
| Journal Title |
Japanese Journal of Applied Physics
|
| ISSN | 13474065
00214922
|
| NCID | AA11509854
AA12295836
|
| Publisher | The Japan Society of Applied Physics
|
| Volume | 55
|
| Issue | 6S1
|
| Start Page | 06GF03
|
| Sort Key | 06GF03
|
| Published Date | 2016-04-28
|
| Remark | © 2016 The Japan Society of Applied Physics
|
| EDB ID | |
| URL ( Publisher's Version ) | |
| FullText File | |
| language |
eng
|
| TextVersion |
Author
|
| departments |
Science and Technology
|
