ID 110895
著者
Aritsuki, Takuya Tokushima University
Nakashima, Takeshi Tokushima University
Kobayashi, Keisuke Tokushima University
資料タイプ
学術雑誌論文
抄録
The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step-terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 ºC for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2V-1s-1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA11509854
AA12295836
出版者
The Japan Society of Applied Physics
55
6S1
開始ページ
06GF03
並び順
06GF03
発行日
2016-04-28
備考
© 2016 The Japan Society of Applied Physics
EDB ID
312461
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系