ID 110895
Author
Aritsuki, Takuya Tokushima University
Nakashima, Takeshi Tokushima University
Kobayashi, Keisuke Tokushima University
Content Type
Journal Article
Description
The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step-terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 ºC for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2V-1s-1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA11509854
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
55
Issue
6S1
Start Page
06GF03
Sort Key
06GF03
Published Date
2016-04-28
Remark
© 2016 The Japan Society of Applied Physics
EDB ID
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology