高品質グラフェン作製技術の研究

This report describes formation and evaluation techniques of high-quality graphene on silicon carbide (SiC) for new functional devices. Epitaxial graphene on SiC substrates is one of the most promising candidates for wafer-scale graphene. Large area graphene with minimal roughness was successfully fabricated using infrared rapid thermal annealing. A surface structure control technique was established to create a uniform single-crystal monolayer of graphene on a SiC substrate. Graphene nanoproperties were measured using scanning probe microscopy (SPM) such as friction force microscopy (FFM) and Kelvin force microscopy (KFM). Graphene electrical properties, such as anisotropy of mobility and graphene-graphene contact system are also discussed.

この論文の著作権は徳島大学ソシオテクノサイエンス研究部にあります。