ID 111035
タイトル別表記
Study on Fabrication Method of High Quality Graphene
著者
キーワード
Graphene
SiC
Rapid infrared thermal annealing
Scanning probe microscopy
van der Pauw method
資料タイプ
紀要論文
抄録
This report describes formation and evaluation techniques of high-quality graphene on silicon carbide (SiC) for new functional devices. Epitaxial graphene on SiC substrates is one of the most promising candidates for wafer-scale graphene. Large area graphene with minimal roughness was successfully fabricated using infrared rapid thermal annealing. A surface structure control technique was established to create a uniform single-crystal monolayer of graphene on a SiC substrate. Graphene nanoproperties were measured using scanning probe microscopy (SPM) such as friction force microscopy (FFM) and Kelvin force microscopy (KFM). Graphene electrical properties, such as anisotropy of mobility and graphene-graphene contact system are also discussed.
掲載誌名
大学院ソシオテクノサイエンス研究部研究報告
ISSN
21859094
cat書誌ID
AA12214889
60
開始ページ
1
終了ページ
10
並び順
1
発行日
2015
権利情報
この論文の著作権は徳島大学ソシオテクノサイエンス研究部にあります。
EDB ID
フルテキストファイル
言語
jpn
著者版フラグ
出版社版
部局
理工学系