ID 111035
Title Alternative
Study on Fabrication Method of High Quality Graphene
Author
Keywords
Graphene
SiC
Rapid infrared thermal annealing
Scanning probe microscopy
van der Pauw method
Content Type
Departmental Bulletin Paper
Description
This report describes formation and evaluation techniques of high-quality graphene on silicon carbide (SiC) for new functional devices. Epitaxial graphene on SiC substrates is one of the most promising candidates for wafer-scale graphene. Large area graphene with minimal roughness was successfully fabricated using infrared rapid thermal annealing. A surface structure control technique was established to create a uniform single-crystal monolayer of graphene on a SiC substrate. Graphene nanoproperties were measured using scanning probe microscopy (SPM) such as friction force microscopy (FFM) and Kelvin force microscopy (KFM). Graphene electrical properties, such as anisotropy of mobility and graphene-graphene contact system are also discussed.
Journal Title
Bulletin of Institute of Technology and Science
ISSN
21859094
NCID
AA12214889
Volume
60
Start Page
1
End Page
10
Sort Key
1
Published Date
2015
Rights
この論文の著作権は徳島大学ソシオテクノサイエンス研究部にあります。
EDB ID
FullText File
language
jpn
TextVersion
Publisher
departments
Science and Technology