ID | 114446 |
Author |
Hayashi, Daisuke
HORIBA STEC|Tokushima University
Nakai, Junya
HORIBA STEC
Minami, Masakazu
HORIBA STEC
Kamimoto, Takahiro
Tokushima University
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Keywords | Laser spectroscopy
Semiconductor process
Computed Tomography
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Content Type |
Journal Article
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Description | The feasibility to control the gas concentration and temperature distributions in a semiconductor process chamber by measuring them was investigated. Gas concentration and temperature distributions for various flow rates were measured with the computed tomography-tunable diode laser absorption spectroscopy (CT-TDLAS). The infrared absorption spectra of multiple laser paths passing through the measured area were collected and the distributions of methane concentration and temperature in the chamber were reconstructed with the computed tomography (CT) calculations. The measured results indicated that the distributions can be independently controlled by measuring with the CT-TDLAS and adjusting the flow rates and the susceptor temperature.
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Journal Title |
Journal of Vibration Testing and System Dynamics
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ISSN | 24754811
2475482X
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Publisher | L & H Scientific Publishing
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Volume | 4
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Issue | 4
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Start Page | 297
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End Page | 309
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Published Date | 2020-12
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EDB ID | |
DOI (Published Version) | |
URL ( Publisher's Version ) | |
FullText File | |
language |
eng
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TextVersion |
Author
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departments |
Science and Technology
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