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ID 114446
Author
Hayashi, Daisuke HORIBA STEC|Tokushima University
Nakai, Junya HORIBA STEC
Minami, Masakazu HORIBA STEC
Kamimoto, Takahiro Tokushima University
Keywords
Laser spectroscopy
Semiconductor process
Computed Tomography
Content Type
Journal Article
Description
The feasibility to control the gas concentration and temperature distributions in a semiconductor process chamber by measuring them was investigated. Gas concentration and temperature distributions for various flow rates were measured with the computed tomography-tunable diode laser absorption spectroscopy (CT-TDLAS). The infrared absorption spectra of multiple laser paths passing through the measured area were collected and the distributions of methane concentration and temperature in the chamber were reconstructed with the computed tomography (CT) calculations. The measured results indicated that the distributions can be independently controlled by measuring with the CT-TDLAS and adjusting the flow rates and the susceptor temperature.
Journal Title
Journal of Vibration Testing and System Dynamics
ISSN
24754811
2475482X
Publisher
L & H Scientific Publishing
Volume
4
Issue
4
Start Page
297
End Page
309
Published Date
2020-12
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology