ID | 114446 |
著者 |
Hayashi, Daisuke
HORIBA STEC|Tokushima University
Nakai, Junya
HORIBA STEC
Minami, Masakazu
HORIBA STEC
Kamimoto, Takahiro
Tokushima University
|
キーワード | Laser spectroscopy
Semiconductor process
Computed Tomography
|
資料タイプ |
学術雑誌論文
|
抄録 | The feasibility to control the gas concentration and temperature distributions in a semiconductor process chamber by measuring them was investigated. Gas concentration and temperature distributions for various flow rates were measured with the computed tomography-tunable diode laser absorption spectroscopy (CT-TDLAS). The infrared absorption spectra of multiple laser paths passing through the measured area were collected and the distributions of methane concentration and temperature in the chamber were reconstructed with the computed tomography (CT) calculations. The measured results indicated that the distributions can be independently controlled by measuring with the CT-TDLAS and adjusting the flow rates and the susceptor temperature.
|
掲載誌名 |
Journal of Vibration Testing and System Dynamics
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ISSN | 24754811
2475482X
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出版者 | L & H Scientific Publishing
|
巻 | 4
|
号 | 4
|
開始ページ | 297
|
終了ページ | 309
|
発行日 | 2020-12
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EDB ID | |
出版社版DOI | |
出版社版URL | |
フルテキストファイル | |
言語 |
eng
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著者版フラグ |
著者版
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部局 |
理工学系
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