ID | 118405 |
Author |
Tang, Hanzhi
The University of Tokyo
Li, Qiang
The University of Tokyo|Advanced Micro Foundry
Ho, Chong Pei
The University of Tokyo|Institute of Microelectronics
Fujikata, Junichi
Photonics Electronics Technology Research Association|Tokushima University
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Noguchi, Masataka
Photonics Electronics Technology Research Association|National Institute of Advanced Industrial Science and Technology
Takahashi, Shigeki
Photonics Electronics Technology Research Association
Toprasertpong, Kasidit
The University of Tokyo
Takagi, Shinichi
The University of Tokyo
Takenaka, Mitsuru
The University of Tokyo
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Content Type |
Journal Article
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Description | In this work, we numerically and experimentally examined the impact of parasitic capacitance on the modulation bandwidth of a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical modulator. The numerical analysis revealed that the parasitic capacitance between the III-V membrane and the Si slab should be considered to achieve high-speed modulation, particularly in the case of a thick gate oxide. We also fabricated a high-speed InGaAsP/Si hybrid MOS optical modulator with a low capacitance using a SiO2-embedded Si waveguide. The fabricated device exhibited a modulation efficiency of 0.245 Vcm and a 3 dB bandwidth of up to 10 GHz. Clear eye patterns with 25 Gbps non-return-to-zero (NRZ) modulation and 40 Gbps 4-level pulse amplitude modulation (PAM-4) were obtained without pre-emphasis.
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Journal Title |
Optics Express
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ISSN | 10944087
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Publisher | Optica Publishing Group
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Volume | 30
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Issue | 13
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Start Page | 22848
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End Page | 22859
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Published Date | 2022-06-08
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EDB ID | |
DOI (Published Version) | |
URL ( Publisher's Version ) | |
FullText File | |
language |
eng
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TextVersion |
Publisher
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departments |
Science and Technology
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