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ID 118405
著者
Tang, Hanzhi The University of Tokyo
Li, Qiang The University of Tokyo|Advanced Micro Foundry
Ho, Chong Pei The University of Tokyo|Institute of Microelectronics
藤方, 潤一 Photonics Electronics Technology Research Association|Tokushima University 徳島大学 教育研究者総覧 KAKEN研究者をさがす
Noguchi, Masataka Photonics Electronics Technology Research Association|National Institute of Advanced Industrial Science and Technology
Takahashi, Shigeki Photonics Electronics Technology Research Association
Toprasertpong, Kasidit The University of Tokyo
Takagi, Shinichi The University of Tokyo
Takenaka, Mitsuru The University of Tokyo
資料タイプ
学術雑誌論文
抄録
In this work, we numerically and experimentally examined the impact of parasitic capacitance on the modulation bandwidth of a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical modulator. The numerical analysis revealed that the parasitic capacitance between the III-V membrane and the Si slab should be considered to achieve high-speed modulation, particularly in the case of a thick gate oxide. We also fabricated a high-speed InGaAsP/Si hybrid MOS optical modulator with a low capacitance using a SiO2-embedded Si waveguide. The fabricated device exhibited a modulation efficiency of 0.245 Vcm and a 3 dB bandwidth of up to 10 GHz. Clear eye patterns with 25 Gbps non-return-to-zero (NRZ) modulation and 40 Gbps 4-level pulse amplitude modulation (PAM-4) were obtained without pre-emphasis.
掲載誌名
Optics Express
ISSN
10944087
出版者
Optica Publishing Group
30
13
開始ページ
22848
終了ページ
22859
発行日
2022-06-08
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
出版社版
部局
理工学系