ID | 74509 |
Title Transcription | ヒカリヘンカン ポリタイプ オ モチイタ ワイド バンド ギャップ
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Title Alternative | Development of wide band-gap semiconductor three-dimensional devices by using photo-converted heteropolytipic structures
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Author |
Tomita, Takuro
Institute of Technology and Science, Division of Ecosystem Design(Graduate School of Advanced Technology and Science, College of Earth and Life Environmental Engineering, Department of Ecosystem Engineering)
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Matsuo, Shigeki
Institute of Technology and Science, Division of Ecosystem Design(Graduate School of Advanced Technology and Science, College of Earth and Life Environmental Engineering, Department of Ecosystem Engineering)
Okada, Tatsuya
Institute of Technology and Science, Division of Advanced Materials(Graduate School of Advanced Technology and Science, College of Systems Innovation Engineering, Department of Mechanical Engineering)
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Naoi, Yoshiki
Institute of Technology and Science, Division of Advanced Materials (Graduate School of Advanced Technology and Science, College of Systems Innovation Engineering Course, Department of Electrical and Electronic Engineering)
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Keywords | semiconductor
laser
laser-ablation
modification
laser-induced periodic structure
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Content Type |
Departmental Bulletin Paper
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Description | Femtosecond laser-induced structural transformations in wide band-gap semiconductors were
studied for the development of the fabrication technique for three-dimensional electronic circuits. In particular, we will report the results on the femtosecond laser-induced periodic structures produced on wide band-gap materials. We also investigated the material properties of laser-irradiated spot by using confocal micro Raman spectroscopy and transmission electron microscopy. We will discuss the effect of femtosecond laser-irradiation on wide band-gap semiconductors. |
Journal Title |
徳島大学大学院ソシオテクノサイエンス研究部研究報告
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ISSN | 21859094
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NCID | AA12214889
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Volume | 52
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Published Date | 2007
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FullText File | |
language |
jpn
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departments |
Science and Technology
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