| ID | 113928 |
| 著者 |
南, 康夫
Tokushima University
|
| キーワード | A3. Molecular beam epitaxy
A1. Sublattice reversal
B2. GaAs/Ge/GaAs
B2. AlAs/Ge/AlAs
A1. Heterostructures
B2. (1 1 3)A and (1 1 3)B GaAs
|
| 資料タイプ |
学術雑誌論文
|
| 抄録 | GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with that for reference (113)B and (113)A GaAs substrates. Sublattice reversal in GaAs/Ge/GaAs heterostructures was achieved on (113)B GaAs substrate. On the other hand, sublattice reversal on (113)A GaAs substrate was obtained by using AlAs/Ge/AlAs heterostructures.
|
| 掲載誌名 |
Journal of Crystal Growth
|
| ISSN | 00220248
|
| cat書誌ID | AA00696341
AA11531784
|
| 出版者 | Elsevier
|
| 巻 | 512
|
| 開始ページ | 74
|
| 終了ページ | 77
|
| 発行日 | 2019-02-06
|
| 権利情報 | © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
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| EDB ID | |
| 出版社版DOI | |
| 出版社版URL | |
| フルテキストファイル | |
| 言語 |
eng
|
| 著者版フラグ |
著者版
|
| 部局 |
理工学系
|
