| ID | 109495 |
| Title Alternative | AlGaN/GaNヘテロ構造上エンハンスメント型GaN MOSFETの開発
|
| Author |
Wang, Qingpeng
|
| Keywords | GaN MOSFETs
ICP
parallel channel
overestimation
process dependency
|
| Content Type |
Thesis or Dissertation
|
| Published Date | 2015-09-10
|
| Remark | 内容要旨・審査要旨・論文本文の公開:
内容要旨・審査要旨 : LID201510231002.pdf 論文本文 : LID201602081002.pdf |
| FullText File | |
| language |
eng
|
| TextVersion |
ETD
|
| MEXT report number | 甲第2877号
|
| Diploma Number | 甲先第230号
|
| Granted Date | 2015-09-10
|
| Degree Name |
Doctor of Engineering
|
| Grantor |
Tokushima University
|
