ID | 118403 |
Author |
Fujikata, Junichi
Photonics Electronics Technology Research Association|Tokushima University
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Noguchi, Masataka
Photonics Electronics Technology Research Association
Katamawari, Riku
Toyohashi University of Technology
Inaba, Kyosuke
Toyohashi University of Technology
Ono, Hideki
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Shimura, Daisuke
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Onawa, Yosuke
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Yaegashi, Hiroki
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Ishikawa, Yasuhiko
Toyohashi University of Technology
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Content Type |
Journal Article
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Description | We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p–n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms.
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Journal Title |
Optics Express
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ISSN | 10944087
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Publisher | Optica Publishing Group
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Volume | 31
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Issue | 6
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Start Page | 10732
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End Page | 10743
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Published Date | 2023-03-09
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EDB ID | |
DOI (Published Version) | |
URL ( Publisher's Version ) | |
FullText File | |
language |
eng
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TextVersion |
Publisher
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departments |
Science and Technology
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