ID | 118403 |
著者 |
藤方, 潤一
Photonics Electronics Technology Research Association|Tokushima University
徳島大学 教育研究者総覧
KAKEN研究者をさがす
Noguchi, Masataka
Photonics Electronics Technology Research Association
Katamawari, Riku
Toyohashi University of Technology
Inaba, Kyosuke
Toyohashi University of Technology
Ono, Hideki
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Shimura, Daisuke
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Onawa, Yosuke
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Yaegashi, Hiroki
Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Ishikawa, Yasuhiko
Toyohashi University of Technology
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資料タイプ |
学術雑誌論文
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抄録 | We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p–n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms.
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掲載誌名 |
Optics Express
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ISSN | 10944087
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出版者 | Optica Publishing Group
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巻 | 31
|
号 | 6
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開始ページ | 10732
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終了ページ | 10743
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発行日 | 2023-03-09
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EDB ID | |
出版社版DOI | |
出版社版URL | |
フルテキストファイル | |
言語 |
eng
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著者版フラグ |
出版社版
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部局 |
理工学系
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