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ID 118403
著者
藤方, 潤一 Photonics Electronics Technology Research Association|Tokushima University 徳島大学 教育研究者総覧 KAKEN研究者をさがす
Noguchi, Masataka Photonics Electronics Technology Research Association
Katamawari, Riku Toyohashi University of Technology
Inaba, Kyosuke Toyohashi University of Technology
Ono, Hideki Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Shimura, Daisuke Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Onawa, Yosuke Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Yaegashi, Hiroki Photonics Electronics Technology Research Association|Oki Electric Industry Co., Ltd.
Ishikawa, Yasuhiko Toyohashi University of Technology
資料タイプ
学術雑誌論文
抄録
We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p–n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms.
掲載誌名
Optics Express
ISSN
10944087
出版者
Optica Publishing Group
31
6
開始ページ
10732
終了ページ
10743
発行日
2023-03-09
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
出版社版
部局
理工学系