ID 109495
Title Alternative
AlGaN/GaNヘテロ構造上エンハンスメント型GaN MOSFETの開発
Author
Wang, Qingpeng
Keywords
GaN MOSFETs
ICP
parallel channel
overestimation
process dependency
Content Type
Thesis or Dissertation
Published Date
2015-09-10
Remark
内容要旨・審査要旨・論文本文の公開:
内容要旨・審査要旨 : LID201510231002.pdf
論文本文 : LID201602081002.pdf
FullText File
language
eng
TextVersion
ETD
MEXT report number
甲第2877号
Diploma Number
甲先第230号
Granted Date
2015-09-10
Degree Name
Doctor of Engineering
Grantor
Tokushima University