ID 110900
著者
Kobayashi, Keisuke The University of Tokushima
Tanabe, Shinichi NTT Basic Research Laboratories, NTT Corporation
Tao, Takuto The University of Tokushima
Okumura, Toshio The University of Tokushima
Nakashima, Takeshi The University of Tokushima
Aritsuki, Takuya The University of Tokushima
O, Ryong-Sok The University of Tokushima
資料タイプ
学術雑誌論文
抄録
The electronic transport of epitaxial graphene on silicon carbide is anisotropic because of the anisotropy of the surface structure of the substrate. In this Letter, we present a new method for measuring anisotropic transport based on the van der Pauw method. This method can measure anisotropic transport on the macroscopic scale without special equipment or device fabrication. We observe an anisotropic resistivity with a ratio of maximum to minimum of 1.62. The calculated maximum mobility is 2876cm2·V-1·s-1, which is 1.43 times higher than that obtained by the standard van der Pauw method.
掲載誌名
Applied Physics Express
ISSN
18820786
18820778
cat書誌ID
AA12295133
出版者
The Japan Society of Applied Physics
8
3
開始ページ
036602
並び順
036602
発行日
2015-02-26
備考
© 2015 The Japan Society of Applied Physics
EDB ID
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系